Exploring channel length effects in 2D MoS2-Based memtransistors and their Synaptic behavior

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dc.contributor.authorESEN MUSTAFA YİĞİT
dc.contributor.authorWonge Lisheshar Ibrahim
dc.contributor.authorNACAR MEHMET
dc.contributor.authorKayahan Arif
dc.contributor.authorAY FERİDUN
dc.contributor.authorKOSKU PERKGÖZ NİHAN
dc.contributor.authorNacar, Mehmet
dc.date.accessioned2026-06-12T11:55:47Z
dc.date.issued2024
dc.descriptionSCI-Expanded | Q:Q2 | YÖK-Özgeçmiş
dc.identifier.doi10.1016/j.mssp.2024.108490
dc.identifier.issn1369-8001
dc.identifier.urihttps://hdl.handle.net/20.500.11782/8095
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.titleExploring channel length effects in 2D MoS2-Based memtransistors and their Synaptic behavior
dspace.entity.typePublication
relation.isAuthorOfPublication7414eb56-2d7c-4d83-a1c6-05292a7bc832
relation.isAuthorOfPublication.latestForDiscovery7414eb56-2d7c-4d83-a1c6-05292a7bc832

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